Characterization of rare earth oxides based MOSFET gate stacks prepared by metal-organic chemical vapour deposition

Materials Science in Semiconductor Processing

Volumn 9, Issue 6, 2006, Pages 1065-1072

  Frohlich, K ^a   Luptak, R ^a   Dobrocka, E ^a   Husekova, K ^a   Cico, K ^a   Rosova, A ^a   Lukosius, M ^b   Abrutis, A ^b   Pisecny, P ^c   Espinos, J P ^d  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^b VILNIUS UNIVERSITY   (Lithuania)

^c INSTITUTE OF CHEMISTRY   (Slovakia)

^d INSTITUTO DE CIENCIA DE MATERIALES DE SEVILLA   (Spain)

Author keywords

CMOS; MOCVD; Rare earth oxides

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIELECTRIC FILMS; MOSFET DEVICES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

MOSFET GATE STACKS; POST DEPOSITION ANNEALING; RARE EARTH OXIDES; X RAY REFLECTIVITY;

RARE EARTH COMPOUNDS;

EID: 33846092217     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.10.025     Document Type: Article

References (20)

1. ITRS 2005 Edition, 〈http://public.itrs.net/〉.
2. Hattori T., Yoshida T., Shirashi T., Takahashi K., Nohira H., Joumori S., et al. Composition, chemical structure, and electronic band structure of rare earth oxide/Si(1 0 0) interfacial transition layer. Microelectron Eng 72 (2004) 283
3. 3 gate dielectric with equivalent oxide thickness of 5 Å. IEEE Electron Dev Lett 21 (2000) 341
4. Zhao C., Witters T., Brijs B., Bender H., Richard O., Caymax M., et al. Ternary rare-earth metal oxide high-κ layers on silicon oxide. Appl Phys Lett 86 (2005) 132903
5. Leskelä M., and Ritala M. Rare-earth oxide thin films as gate oxides in MOSFET transistors. J Solid State Chem 171 (2003) 170
6. Stemmer S. Thermodynamic considerations in the stability of binary oxides for alternative gate dielectrics in complementary metal-oxide-semiconductors. J Vac Sci Technol B 22 2 (2004) 791-800
7. 3). J Appl Phys 93 (2003) 6393
8. Wu X., Landheer D., Quance T., Graham M.J., and Botton G.A. Structural comparison of gadolinium and lanthanum silicate films on Si(1 0 0) by HRTEM, EELS and SAED. Appl Surf Sci 200 (2002) 15
9. Lichtenwalner D.J., Jur J.S., Kingon A.I., Agustin M.P., Yand Y., Stemmer S., et al. Lanthanum silicate gate dielectric stacks with subnanometer equivalent oxide thickness utilizing an interfacial silica consumption reaction. J Appl Phys 98 (2005) 024314
10. Jones A.C., Aspinall H.C., Chalker P.R., Potter R.J., Kukli K., Rahtu A., et al. J Mater Chem 14 (2004) 3101
11. Jones A.C., Aspinall H.C., Chalker P.R., Potter R.J., Manning T.D., Loo Y.F., et al. Chem Vap Deposition 12 (2006) 83
12. Leskelä M., Kukli K., and Ritala M. Rare-earth oxide thin films for gate dielectrics in microelectronics. J Alloys Comp 418 (2006) 27-34
13. Lo Nigro R., Malandrino G., Toro R.G., and Fragala I.L. An MOCVD approach to high-κ praseodymium-based films. Chem Vap Deposition 12 (2006) 109-124
14. Abrutis A, Lukosius M, Kiziene A, Baumann PK, Schumacher M, Lindner J. Electrochemical Society Proceedings, V. 2005-09 (2005) 936-43. The Electrochemical Society, Inc., Pennington, NJ, USA, ISBN 1-56677-427-6. Proceedings of EUROCVD15 conference, Bochum, Germany, 5-11 September; 2005.
15. Jun J.H., Choi D.J., Kim K.H., Oh K.Y., and Hwang Ch.J. Effect of structural properties on electrical properties of lanthanum oxide thin film as a gate dielectric. Jpn J Appl Phys 42 (2003) 3519-3522
16. Yamada H., Shimizu T., Kurokawa A., Ishii K., and Suzuki E. MOCVD of high-dielectric-constant lanthanum oxide thin films. J Electrochem Soc 150 8 (2003) G429-G435
17. Senateur J.P., Dubourdieu C., Galindo V., Weiss F., and Abrutis A. Innovative processing of films and nanocrystalline powders (2002), Imperial College Press, London p. 71
18. Pisecny P., Husekova K., Frohlich K., Harmatha L., Soltys J., Machajdik D., et al. Growth of lanthanum oxide films for application as a gate dielectric in CMOS technology. Mat Sci Semicond Proc 7 (2004) 231-236
19. Luptak R., Frohlich K., Rosova A., Husekova K., Tapajna M., Machajdik D., et al. Growth of gadolinium oxide films for advanced MOS structure. Microelectron Eng 80 (2005) 154-157
20. Frohlich K., Espinos J.P., Vincze A., Tapajna M., and Husekova K. Thermal stability of Ru gate electrode on HfSiO dielectric. Mater Res Soc Symp Proc 917 (2006) E05-02