PBTI & HCI characteristics for High-k Gate dielectrics with Poly-Si & MIPS (Metal Inserted Poly-Si Stack) gates

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2005, Pages 50-54

  Jung, Hyung Suk ^a   Han, Sung Kee ^a   Kim, Min Joo ^a   Kim, Jong Pyo ^a   Kim, Yun Seok ^a   Lim, Ha Jin ^a   Doh, Seek Joo ^a   Lee, Jung Hyoung ^a   Yu, Mi Young ^a   Lee, Jong Ho ^a   Lee, Nae In ^a   Kang, Ho Kyu ^a   Park, Seong Geon ^a   Kang, Sang Bom ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH-K GATE DIELECTRICS; HOT CARRIER INJECTION (HCI); METAL INSERTED POLY-SI STACK (MIPS); POSITIVE BIAS TEMPERATURE INSTABILITY (PBTI);

GATES (TRANSISTOR); HOT CARRIERS; POLYSILICON; RELIABILITY; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

DIELECTRIC MATERIALS;

EID: 28744440167     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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