Voltage-induced degradation in self-aligned polycrystalline silicon gate n -type field-effect transistors with HfO2 gate dielectrics

Applied Physics Letters

Volumn 85, Issue 24, 2004, Pages 5965-5967

  Park, Jaehoo ^a   Cho, Moonju ^a   Park, Hong Bae ^a   Park, Tae Joo ^a   Lee, Suk Woo ^a   Hong, Sug Hun ^a   Jeong, Doo Seok ^a   Lee, Chihoon ^a   Hwang, Cheol Seong ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; DIELECTRIC MATERIALS; ELECTRON TRAPS; LEAKAGE CURRENTS; POLYCRYSTALLINE MATERIALS; THRESHOLD VOLTAGE; TRANSMISSION ELECTRON MICROSCOPY;

ATOMIC LAYER DEPOSITION; GATE DIELECTRIC FILMS; INTERLAYER DIELECTRIC (ILD) DEPOSITION; WET ETCHING;

FIELD EFFECT TRANSISTORS;

EID: 17944371037     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1834992     Document Type: Article

References (13)

1. Semiconductor Industry Association, International Technology Roadmap for Semiconductors: Front End Process (2003), p. 2.
2. L. Kang, K. Onishi, Y. Jeon, B. H. Lee, C. Kang, W.-J. Qi, R. Nieh, S. Gopalan, R. Choi, and J. C. Lee, Tech. Dig. - Int. Electron Devices Meet. 2000, 35 2000.
3. D. Goguenheim, C. Trapes, and A. Bravaix, J. Non-Cryst. Solids 322, 183 (2003).
4. G. Ribes, S. Bruỳre, M. Denais, F. Monsieur, V. Huard, D. Roy, and G. Ghibaudo, Microelectron. Eng. 72, 10 (2004).
5. M. Cho, J. Park, H. B. Park, C. S. Hwang, J. Jeong, K. S. Hyun, Y. W. Kim, C.-B. Oh, and H. S. Kang, Appl. Phys. Lett. 81, 3630 (2002).
6. H. B. Park, M. Cho, J. Park, S. W. Lee, T. J. Park, and C. S. Hwang, Electrochem. Solid-State Lett. 7, G 254 (2004).
7. M. Cho, H. B. Park, J. Park, S. W. Lee, C. S. Hwang, G. H. Jang, and J. Jeong, Appl. Phys. Lett. 83, 5503 (2003).
8. H. B. Park, M. Cho, J. Park, S. W. Lee, C. S. Hwang, J.-P. Kim, J.-H. Lee, N.-I. Lee, H.-K. Kang, J.-C. Lee, and S.-J. Oh, J. Appl. Phys. 94, 3641 (2003).
9. H. B. Park, M. Cho, J. Park, S. W. Lee, C. S. Hwang, and J. Jeong, Electrochem. Solid-State Lett. 7, F25 (2004).
10. S. K. Kim and C. S. Hwang, J. Appl. Phys. 96, 2323 (2004).
11. D. K. Schroder, Semiconductor Material and Device Characterization (Wiley, New York, 1998), p. 373.
12. S. M. Sze, Modern Semiconductor Device Physics (Wiley, New York, 1998), p. 154.
13. T. Hori, Gate Dielectrics and MOS ULSIs; Principles, Technologies, and Applications (Springer, Berlin, 1997), p. 43.