Effects of CH2F2 addition on a high aspect ratio contact hole etching in a C4F6/O2/Ar plasma

Electrochemical and Solid-State Letters

Volumn 6, Issue 9, 2003, Pages

  Ryu, Hyun Kyu ^a   Lee, Byung Seok ^a   Park, Sung Ki ^a   Kim, Il Wook ^a   Kim, Chang Koo ^b  

^a Hynix Semiconductor Inc   (South Korea)

^b Ajou University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITION REACTIONS; ETCHING; FLUOROCARBONS; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

PHOTORESIST LAYERS;

SILICA;

EID: 0042918052     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1594412     Document Type: Article

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