Angular dependence of Si3 N4 etch rates and the etch selectivity of Si O2 to Si3 N4 at different bias voltages in a high-density C4 F8 plasma

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 25, Issue 5, 2007, Pages 1395-1401

  Lee, Jin Kwan ^a   Lee, Gyeo Re ^a   Min, Jae Ho ^a   Moon, Sang Heup ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS VOLTAGE; ELECTROCHEMICAL ETCHING; FLUOROCARBONS; SILICA; SUBSTRATES; VOLTAGE MEASUREMENT;

ETCH RATES; ION-INCIDENT ANGLE; NORMALIZED ETCH YIELD (NEY);

SILICON NITRIDE;

EID: 34548227793     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2757180     Document Type: Article

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