The dry etching of a sol-gel deposited ZnO thin film in a high density BCl3/Ar plasma

Thin Solid Films

Volumn 518, Issue 10, 2010, Pages 2905-2909

  Woo, Jong Chang ^a   Um, Doo Seong ^a   Kim, Chang Il ^a  

^a Chung Ang University   (South Korea)

Author keywords

Etch rate; Plasma etching; Selectivity; X ray Photoelectron Spectroscopy; Zinc oxide

Indexed keywords

AR PLASMAS; CHEMICAL ETCHING; CHEMICAL STATE; ETCH MECHANISM; ETCH RATE; ETCH RATES; ETCH SELECTIVITY; ETCHED SURFACE; ETCHING CHARACTERISTICS; GAS PRESSURES; HIGH DENSITY; HIGH VOLATILITY; IONIC SPECIES; MONOTONIC BEHAVIOR; PHYSICAL SPUTTERING; QUADRUPOLE MASS SPECTROMETER; RF-POWER; SELECTIVITY; ZNO; ZNO THIN FILM;

ARGON; DRY ETCHING; ION BOMBARDMENT; IONS; MASS SPECTROMETRY; PHOTOELECTRICITY; PHOTOIONIZATION; PHOTONS; PHOTORESISTS; PLASMA DIAGNOSTICS; PLASMA ETCHING; PLASMAS; ZINC; ZINC OXIDE;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 76049128210     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.10.144     Document Type: Article

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