Novel semiconductor technologies of ZnO films towards ultraviolet LEDs and invisible FETs

IEICE Transactions on Electronics

Volumn E83-C, Issue 10, 2000, Pages 1614-1617

  Ohtomo, Akira ^a   Kawasaki, Masashi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Band gap engineering; Field effect transistor; Nitrogen doping; Ultraviolet laser; Zno

Indexed keywords

EID: 0009937896     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (14)

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7. A. Ohtomo, M. Kawasaki, I. Ohkubo, H. Koinuma, T. Yasuda, and Y. Segawa, "Structure and optical properties of ZnO/Mgo.2Zno.sO superlattices," Appl. Phys. Lett., vol.75, p.980, 1999.
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11. Z.K. Tang, G.K.L. Wong, P. Yu, M. Kawasaki, A. Ohtomo, H. Koinuma, and Y. Segawa, "Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films," Appl. Phys. Lett., vol.72, p.3270, 1998.
12. A. Ohtomo, T. Makino, K. Tamura, Y. Matsumoto, Y. Segawa, Z.K. Tang, G.K.L. Wang, H. Koinuma, and M. Kawasaki, "High throughput optimizations or alloy and doped films based on ZnO and parallel synthesis of ZnO/MgxZni_xO quantum wells using combinatorial laser MBE towards ultraviolet laser," Proc. SPIE, vol.3941 pp.70-83, San Jose Convention center, San Jose, USA, Jan. 22-28, 2000.
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