ICP dry etching of ZnO and effects of hydrogen

Solid-State Electronics

Volumn 47, Issue 12, 2003, Pages 2289-2294

  Ip, K ^a   Overberg, M E ^a   Baik, K W ^a   Wilson, R G ^e   Kucheyev, S O ^b,d   Williams, J S ^b   Jagadish, C ^b   Ren, F ^a   Heo, Y W ^a   Norton, D P ^a   Zavada, J M ^c   Pearton, S J ^a  

^a University of Florida   (United States)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^c U S ARMY RESEARCH OFFICE   (United States)

^d LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

^e NONE

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; DRY ETCHING; INDUCTIVELY COUPLED PLASMA; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY;

ION ENERGY;

ZINC OXIDE;

EID: 0142055136     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00211-9     Document Type: Article

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