Diffusion and activation of n-type dopants in germanium

Journal of Applied Physics

Volumn 104, Issue 2, 2008, Pages

  Koike, Masahiro ^a   Kamata, Yoshiki ^a   Ino, Tsunehiro ^a   Hagishima, Daisuke ^a   Tatsumura, Kosuke ^a   Koyama, Masato ^a   Nishiyama, Akira ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CLARIFICATION; CONCENTRATION (PROCESS); HIGH PERFORMANCE LIQUID CHROMATOGRAPHY; ION BOMBARDMENT; ION IMPLANTATION; MASS SPECTROMETRY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SILICON;

ANNEALING CONDITIONS; CALCULATED VALUES; CHEMICAL CONCENTRATIONS; CHEMICAL-; GE(100); INCOMPLETE IONIZATION; N-TYPE DOPANTS; N-TYPE IMPURITIES; SECONDARY ION MASS SPECTROMETRY PROFILES; SPREADING RESISTANCE PROBE;

GERMANIUM;

EID: 48849083636     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2958326     Document Type: Article

References (23)

1. Semiconductor Industry Association, in International Technology Roadmap for Semiconductors at http://public.itrs.net/ (International SEMATECH, Austin, TX, 2007).
2. M. Koike, T. Ino, Y. Kamimuta, M. Koyama, Y. Kamata, M. Suzuki, Y. Mitani, and A. Nishiyama, Phys. Rev. B 0163-1829 10.1103/PhysRevB.73.125123 73, 125123 (2006).
3. M. Suzuki, M. Tomita, T. Yamaguchi, and N. Fukushima, Tech. Dig.-Int. Electron Devices Meet. 2005, 445.
4. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley-Interscience, New York, 1981).
5. Y. Kamata, Y. Kamimuta, T. Ino, R. Iijima, M. Koyama, and A. Nishiyama, Tech. Dig.-Int. Electron Devices Meet. 2005, 441.
6. C. O. Chui, H. Kim, D. Chi, B. B. Triplett, P. C. McIntyre, and K. C. Saraswat, Tech. Dig.-Int. Electron Devices Meet. 2002, 437.
7. C. O. Chui, K. Gopalakrishnan, P. B. Griffin, J. D. Plummer, and K. C. Saraswat, Appl. Phys. Lett. 0003-6951 10.1063/1.1618382 83, 3275 (2003).
8. C. O. Chui, L. Kulig, J. Moran, W. Tsai, and K. C. Saraswat, Appl. Phys. Lett. 0003-6951 10.1063/1.2037861 87, 091909 (2005).
9. S. Matsumoto and T. Niimi, J. Electrochem. Soc. 0013-4651 10.1149/1.2131668 125, 1307 (1978).
10. E. Vainonen-Ahlgren, T. Ahlgren, J. Likonen, S. Lehto, J. Keinonen, W. Li, and J. Haapamaa, Appl. Phys. Lett. 0003-6951 10.1063/1.127087 77, 690 (2000).
11. T. Ahlgren, J. Likonen, S. Lehto, E. Vainonen-Ahlgren, and J. Keinonen, AIP Conf. Proc. 0094-243X 10.1063/1.1395445 576, 887 (2001).
12. H. Bracht and S. Brotzmann, Mater. Sci. Semicond. Process. 1369-8001 10.1016/j.mssp.2006.08.041 9, 471 (2006).
13. H. Bracht, Phys. Rev. B 0163-1829 10.1103/PhysRevB.75.035210 75, 035210 (2007).
14. S. Brotzmann and H. Bracht, J. Appl. Phys. 0021-8979 10.1063/1.2837103 103, 033508 (2008).
15. P. P. Altermatt, A. Schenk, and G. Heiser, J. Appl. Phys. 0021-8979 10.1063/1.2386934 100, 113714 (2006).
16. P. P. Altermatt, A. Schenk, B. Schmithüsen, and G. Heiser, J. Appl. Phys. 0021-8979 10.1063/1.2386935 100, 113715 (2006).
17. G. Xiao, J. Lee, J. J. Liou, and A. Ortiz-Conde, Microelectron. Reliab. 0026-2714 10.1016/S0026-2714(99)00027-X 39, 1299 (1999).
18. H. Watanabe and S. Takagi, J. Appl. Phys. 0021-8979 10.1063/1.1368868 90, 1600 (2001).
19. C. Kittel, Introduction to Solid State Physics, 8th ed. (Wiley, New York, 2004).
20. U. Rössler, Solid State Theory: An Introduction (Springer-Verlag, Berlin, 2004).
21. A. Satta, E. Simoen, T. Janssens, T. Clarysse, B. De Jaeger, A. Benedetti, I. Hoflijk, B. Brijs, M. Meuris, and W. Vandervorst, ECS Trans. 153, G229 (2006). 0163-1829
22. G. Dilliway, R. Van Den Boom, B. Parmentier, T. Clarysse, E. R. Simoen, R. Loo, M. M. Meuris, W. Vandervorst, and M. R. Caymax, ECS Trans.. 3, 599 (2006).
23. F. A. Trumbore, Bell Syst. Tech. J. 39, 205 (1960). 0005-8580