Physical and chemical investigation of substrate temperature dependence of zirconium oxide films on Si(100)

Bulletin of the Korean Chemical Society

Volumn 30, Issue 11, 2009, Pages 2729-2734

  Chun, Misun ^a   Moon, Myung Jun ^a   Park, Juyun ^a   Kang, Yong Cheol ^a  

^a Pukyong National University   (South Korea)

Author keywords

Oxidation state; RF sputtering; Thin film; XPS; Zirconia

Indexed keywords

ATOMIC FORCE MICROSCOPES; CHEMICAL ENVIRONMENT; CRYSTALLINITIES; DIFFERENT SUBSTRATES; OXIDATION STATE; RADIO FREQUENCY MAGNETRON SPUTTERING; RF-SPUTTERING; SI (100) SUBSTRATE; SI(1 0 0); SI(100) SURFACE; SUBSTRATE TEMPERATURE; SUBSTRATE TEMPERATURE DEPENDENCE; SURFACE BEHAVIOR; THICKNESS OF THE FILM; XPS; ZIRCONIUM OXIDE; ZIRCONIUM OXIDE FILMS;

ATOMIC SPECTROSCOPY; CHEMICAL ELEMENTS; DESCALING; OXIDATION; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SPECTROSCOPIC ELLIPSOMETRY; SUBSTRATES; THICKNESS MEASUREMENT; THIN FILM DEVICES; THIN FILMS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY; ZIRCONIA; ZIRCONIUM; ZIRCONIUM ALLOYS;

OXIDE FILMS;

EID: 75849118279     PISSN: 02532964     EISSN: 12295949     Source Type: Journal    
DOI: 10.5012/bkcs.2009.30.11.2729     Document Type: Article

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