Spectroscopic ellipsometry characterization of ZrO2 thin films by nitrogen-assisted reactive magnetron sputtering

Materials Science in Semiconductor Processing

Volumn 9, Issue 6, 2006, Pages 1025-1030

  Zhu, L Q ^a   Fang, Q ^a,b   He, G ^a   Liu, M ^a   Xu, X X ^a   Zhang, L D ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (China)

^b UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

High k dielectrics; Optical constant; Spectroscopic ellipsometry; Tauc Lorentz dispersion function; ZrO2

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; ELLIPSOMETRY; MAGNETRON SPUTTERING; OPTICAL PROPERTIES; X RAY PHOTOELECTRON SPECTROSCOPY; ZIRCONIUM;

HIGH-K DIELECTRICS; OPTICAL CONSTANT; SPECTROSCOPIC ELLIPSOMETRY; TAUC LORENTZ DISPERSION FUNCTIONS; ZRO2;

THIN FILMS;

EID: 33846107462     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.10.019     Document Type: Article

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