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Applied Physics Letters

Volumn 96, Issue 1, 2010, Pages

Improved ferroelectric properties of Pb (Zr0.52, Ti 0.48) O3 thin film on single crystal diamond using CaF2 layer

(4) Liao, Meiyong a Nakajima, Kiyomi a Imura, Masataka a Koide, Yasuo a

a NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COERCIVE FIELD; DUAL ROLE; FERROELECTRIC PROPERTY; FILM DEPOSITION; FORWARD BIAS; IN-PLANE POLARIZATION; LEAD ZIRCONATE TITANATE; PB(ZR ,TI)O; PZT; PZT FILM; PZT THIN FILM; REMANENT POLARIZATION; SINGLE CRYSTAL DIAMOND; SRTIO; WIDE BAND GAP;

BUFFER LAYERS; CAPACITANCE; CAPACITORS; DIAMONDS; FERROELECTRICITY; LEAD; OXIDE MINERALS; PEROVSKITE; PIEZOELECTRIC ACTUATORS; PIEZOELECTRIC MATERIALS; POLARIZATION; SINGLE CRYSTALS; THIN FILM DEVICES; THIN FILMS; ZIRCONIUM;

SEMICONDUCTING LEAD COMPOUNDS;

EID: 75749110947 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3291056 Document Type: Article

Times cited : (12)

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