SCOPUS 정보 검색 플랫폼

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 12 PART A, 1998, Pages

Improved stability of metal-insulator-diamond semiconductor interface by employing BaF2 insulator film

(5) Tanaka, Hiroyuki a Yun, Young a Shirakawa, Yusuke a Maki, Tetsuro a Kobayashi, Takeshi a

a OSAKA UNIVERSITY (Japan)

Author keywords

BaF2; C V curve; CaF2; Diamond; MgF2; MIS; Surface state

Indexed keywords

BAND STRUCTURE; BARIUM COMPOUNDS; CALCIUM COMPOUNDS; CAPACITANCE; ELECTRIC INSULATING MATERIALS; ELECTRIC POTENTIAL; ELECTRONIC DENSITY OF STATES; FLUORINE COMPOUNDS; GATES (TRANSISTOR); INTERFACES (MATERIALS); MAGNESIUM COMPOUNDS; SEMICONDUCTING DIAMONDS;

BARIUM FLUORIDE; CALCIUM FLUORIDE; CAPACITANCE VOLTAGE CHARACTERISTICS; MAGNESIUM FLUORIDE;

MISFET DEVICES;

EID: 0032304480 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.37.l1444 Document Type: Article

Times cited : (10)

References (13)

1
- 0028747865
- D. L. Dreifus, A. J. Tessmer, J. S. Holmes, C. T. Kao, D. M. Malta, L. S. Plano and B. R. Stoner: Mater. Res. Soc. Symp. Proc. 339 (1994) 109.
- (1994) Mater. Res. Soc. Symp. Proc. , vol.339 , pp. 109
- Dreifus, D.L.¹ Tessmer, A.J.² Holmes, J.S.³ Kao, C.T.⁴ Malta, D.M.⁵ Plano, L.S.⁶ Stoner, B.R.⁷

2
- 0026102916
- G. Sh. Gildenblat, S. A. Grot, C. W. Hatfield and A. R. Badzian: IEEE Electron Device Lett. EDL-12 (1991) 37.
- (1991) IEEE Electron Device Lett. , vol.EDL-12 , pp. 37
- Gildenblat, G.Sh.¹ Grot, S.A.² Hatfield, C.W.³ Badzian, A.R.⁴

3
- 0026257206
- C. R. Zeisse, C. A. Hewett, R. Nguyen, J. R. Zeidler and R. G. Wilson: IEEE Electron Device Lett. EDL-12 (1991) 602.
- (1991) IEEE Electron Device Lett. , vol.EDL-12 , pp. 602
- Zeisse, C.R.¹ Hewett, C.A.² Nguyen, R.³ Zeidler, J.R.⁴ Wilson, R.G.⁵

4
- 0023401445
- M. W. Geis, D. D. Rathman, D. J. Ehrlich, R. A. Murphy and W. T. Lindley: IEEE Electron Device Lett. EDL-8 (1987) 341.
- (1987) IEEE Electron Device Lett. , vol.EDL-8 , pp. 341
- Geis, M.W.¹ Rathman, D.D.² Ehrlich, D.J.³ Murphy, R.A.⁴ Lindley, W.T.⁵

5
- 0029305509
- Y. Otsuka, S. Suzuki, S. Shikama, T. Maki and T. Kobayashi: Jpn. J. Appl. Phys. 34 (1995) L551.
- (1995) Jpn. J. Appl. Phys. , vol.34
- Otsuka, Y.¹ Suzuki, S.² Shikama, S.³ Maki, T.⁴ Kobayashi, T.⁵

6
- 0031248147
- Y. Yun, T. Maki and T. Kobayashi: J. Appl. Phys. 82 (1997) 3422.
- (1997) J. Appl. Phys. , vol.82 , pp. 3422
- Yun, Y.¹ Maki, T.² Kobayashi, T.³

7
- 0011376370
- S. Suzuki, Y. Otsuka, T. Maki and T. Kobayashi: Jpn. J. Appl. Phys. 35 (1996) L1031.
- (1996) Jpn. J. Appl. Phys. , vol.35
- Suzuki, S.¹ Otsuka, Y.² Maki, T.³ Kobayashi, T.⁴

8
- 0026932016
- T. Maki, S. Shikama, M. Komori, Y. Sakaguchi, K. Sakuta and T. Kobayashi: Jpn. J. Appl. Phys. 31 (1992) L1446.
- (1992) Jpn. J. Appl. Phys. , vol.31
- Maki, T.¹ Shikama, S.² Komori, M.³ Sakaguchi, Y.⁴ Sakuta, K.⁵ Kobayashi, T.⁶

9
- 0030395822
- H. Kawarada: Surf. Sci. Rep. 26 (1996) 205.
- (1996) Surf. Sci. Rep. , vol.26 , pp. 205
- Kawarada, H.¹

10
- 0001371968
- H. Kawarada, M. Aoki and M. Ito: Appl. Phys. Lett. 65 (1994) 1563.
- (1994) Appl. Phys. Lett. , vol.65 , pp. 1563
- Kawarada, H.¹ Aoki, M.² Ito, M.³

11
- 0001188528
- L. M. Terman: Solid State Electron. 5 (1962) 285.
- (1962) Solid State Electron. , vol.5 , pp. 285
- Terman, L.M.¹

12
- 0003516749
- 3rd ed.
- P. W. Atkins: Physical Chemistry (1986) 3rd ed.
- (1986) Physical Chemistry
- Atkins, P.W.¹

13
- 35848953179
- 3rd ed.
- M. W. Chase, Jr., C. A. Davies, J. R. Downey, Jr., D. J. Frurip, R. A. McDonald and A. N. Syvernd: JANAF Thermochemical Tables (1985) 3rd ed.
- (1985) JANAF Thermochemical Tables
- Chase Jr., M.W.¹ Davies, C.A.² Downey Jr., J.R.³ Frurip, D.J.⁴ McDonald, R.A.⁵ Syvernd, A.N.⁶

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.