Transport and performance of a gate all around InAs nanowire transistor

Semiconductor Science and Technology

Volumn 24, Issue 8, 2009, Pages

  Alam, Khairul ^a  

^a EAST WEST UNIVERSITY   (Bangladesh)

Author keywords

[No Author keywords available]

Indexed keywords

CONVENTIONAL METALS; CURRENT COMPONENT; CURRENT GAINS; FLAT BAND; GATE BIAS; GATE-ALL-AROUND; INAS; NANOWIRE TRANSISTORS; ON/OFF CURRENT RATIO; PERFORMANCE METRICS; QUANTUM CAPACITANCE; QUANTUM SIMULATIONS; SUBTHRESHOLD SLOPE; SWITCHING DELAY; THERMAL CURRENT; TRANSMISSION COEFFICIENTS; TRANSPORT PHYSICS; TUNNELING CURRENT;

ELECTRON TUNNELING; FIELD EFFECT TRANSISTORS; INDIUM ARSENIDE; MODULATION; NANOWIRES; SEMICONDUCTING INDIUM; TUNNELING (EXCAVATION); WIND TUNNELS;

QUANTUM CHEMISTRY;

EID: 68949117845     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/24/8/085003     Document Type: Article

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