Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs

Journal of Crystal Growth

Volumn 248, Issue SUPPL., 2003, Pages 119-123

  Longo, Massimo ^a   Magnanini, R ^a   Parisini, A ^a   Tarricone, L ^a   Carbognani, A ^a   Bocchi, C ^b   Gombia, E ^b  

^a UNIVERSITY OF PARMA   (Italy)

^b IMEM CNR   (Italy)

Author keywords

A1. Carbon doping; A3. Metalorganic vapor phase epitaxy; B1. GaAs; B1. Tertiary butylarsine

Indexed keywords

CAPACITANCE MEASUREMENT; DOPING (ADDITIVES); GALLIUM COMPOUNDS; HALL EFFECT; HOLE MOBILITY; PHOTOLUMINESCENCE;

CARBON DOPING;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0037291931     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01846-8     Document Type: Conference Paper

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