Heavy carbon doping of GaAs by MOVPE using a new dopant source CBrCl3 and characterization of the epilayers

Journal of Crystal Growth

Volumn 248, Issue SUPPL., 2003, Pages 124-129

  Uchida, K ^a,b   Bhunia, S ^a,c   Sugiyama, N ^a   Furiya, M ^a   Katoh, M ^b   Katoh, S ^b   Nozaki, S ^a,b   Morisaki, H ^a,b  

^a UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

^b NANOTECO Corporation   (Japan)

^c Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

A1. Compensation; A3. Metalorganic vapor phase epitaxy; B1. Carbon; B1. CBrCl3; B1. GaAs

Indexed keywords

CARBON; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION ANALYSIS;

EPILAYERS;

SEMICONDUCTOR DOPING;

EID: 0037292443     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01821-3     Document Type: Conference Paper

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