Characterization of oxygen and carbon in undoped AlGaAs grown by organometallic vapor-phase epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 1 A, 1997, Pages 23-28

  Kakinuma, Hiroaki ^a   Mohri, Mikio ^a   Akiyama, Masahiro ^a  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

AlGaAs; Carbon; FT IR; Hall mobility; Hole concentration; OMVPE; Oxygen; Percolation theory; SIMS

Indexed keywords

CARBON IMPURITIES; OXYGEN IMPURITIES; TRIMETHYLALUMINUM;

CARBON; CRYSTAL IMPURITIES; FOURIER TRANSFORM INFRARED SPECTROSCOPY; METALLORGANIC VAPOR PHASE EPITAXY; OXYGEN; PERCOLATION (SOLID STATE); SECONDARY ION MASS SPECTROMETRY;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0030697007     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.36.23     Document Type: Article

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