Carbon doping and etching effects of CBr4 during metalorganic chemical vapor deposition of GaAs and AlAs

Journal of Crystal Growth

Volumn 172, Issue 1-2, 1997, Pages 5-12

  Tateno, Kouta ^a   Kohama, Yoshitaka ^a   Amano, Chikara ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; EFFECTS; ETCHING; GALLIUM COMPOUNDS; GIBBS FREE ENERGY; METALLORGANIC CHEMICAL VAPOR DEPOSITION;

CARBON DOPING; GROWTH RATE; GROWTH TEMPERATURE; HOLE CONCENTRATION;

SEMICONDUCTOR DOPING;

EID: 0031546739     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00737-3     Document Type: Article

References (26)

1. M.G. Peters, B.J. Thibeault, D.B. Young, A.C. Gossard and L.A. Coldren, J. Vac. Sci. Technol. B 12 (1994) 3075.
2. K.L. Lear, R.P. Schneider, K.D. Choquette, S.P. Kilcoyne, J.J. Figiel and J.C. Zolper, IEEE Photon. Tech. Lett. 6 (1994) 1053.
3. Y. Kohama, Y. Ohiso, S. Fukushima and T. Kurokawa, IEEE Photon. Tech. Lett. 6 (1994) 918.
4. Y. Kohama, Y. Ohiso, C. Amano and T. Kurokawa, Inst. Phys. Conf. Ser. 141 (1995) 559.
5. L.W. Yang, P.D. Wright, V. Eu, Z, Lu and A. Majerfeld, J. Appl. Phys. 72 (1992) 2063.
6. S.A. Stockmann, G.E. Höfler, J.N. Baillargeon, K.C. Hsieh, K.Y. Cheng and G.E. Stillman, J. Appl. Phys. 72 (1992) 981.
7. P.M. Enquist, Appl. Phys. Lett. 57 (1990) 2348.
8. M. Konagai, T. Yamada, T. Akatsuka, K. Saito, E. Tokumitsu and K. Takahashi, J. Crystal Growth 98 (1989) 167.
9. H. Kohda and K. Wada, J. Crystal Growth 135 (1994) 629.
10. N. Watanabe, H. Ito and T. Ishibashi, J. Crystal Growth 147 (1995) 256.
11. T.J. de Lyon, N.I. Buchan, P.D. Kirchner, J.M. Woodall, G.J. Scilla and F. Cardone, Appl. Phys. Lett. 58 (1991) 517.
12. J.-S. Lee, I. Kim, B.-D Choe and W.G. Jeong, J. Appl. Phys. 76 (1994) 5079.
13. C.R. Abernathy, S.J. Pearton, F. Ren, W.S. Hobson and P.W. Wisk, J. Vac. Sci. Technol. A 12 (1994) 1186.
14. S.A. Stockman, A.W. Hanson, C.M. Colomb, M.T. Fresina, J.E. Baker and G.E. Stillman, J. Electron. Mater. 23 (1994) 791.
15. G.E. Höfler, H.J. Höfler, N. Holonyak, Jr. and K.C. Hsieh, J. Appl. Phys. 72 (1992) 5318.
16. Y. Kohama, C. Amano, Y. Ohiso and T. Kurokawa, Jpn. J. Appl. Phys. 34 (1995) 3504.
17. S.W. Novak and R.G. Wilson, in: Secondary Ion Mass Spectrometry, SIMS VI (Wiley, New York) p. 303.
18. J.D. MacKenzie, C.R. Abernathy, S.J. Pearton and S.N.G. Chu, Appl. Phys. Lett. 66 (1995) 1397.
19. R.E. Pritchard, B.R. Davidson, R.C. Newman, T.J. Bullough, T.B. Joyce, R. Jones and S. Öberg, Semicond. Sci. Technol. 9 (1994) 140.
20. G.B. Stringfellow, J. Crystal Growth 75 (1986) 91.
21. M. Masi, H. Simka, K.F. Jensen, T.F. Kuech and R. Potemski, J. Crystal Growth 124 (1992) 483.
22. F.A. Cotton and G. Wilkinson, Advanced Inorganic Chemistry A Comprehensive Text, 4th ed. (Wiley, New York).
23. D.R. Stull and H. Prophet, JANAF Themochemical Tables, 2nd ed., Natl. Std. Ref. Data Ser., Natl. Bur. Std. 37 (June 1971).
24. C.R. Abernathy, J. Crystal Growth 107 (1991) 982.
25. J. Saito and K. Kondo, J. Appl. Phys. 67 (1990) 6274.
26. C. Su, Z.-G. Dai, W. Luo, D.-H. Sun, M.F. Vernon and B.E. Bent, Surf. Sci. 312 (1994) 181.