Carbon doping and etching of AlxGa1-xAs (0≤x≤1) with carbon tetrachloride in metalorganic vapor phase epitaxy

Applied Physics Letters

Volumn 70, Issue 26, 1997, Pages 3600-3602

  Hou, H Q ^a   Mammons, B E ^a   Chui, H C ^a,b  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0012177954     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119245     Document Type: Article

References (10)

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8. H. Q. Hou, H. C. Chui, K. D. Choquette, B. E. Hammons, W. G. Breiland, and K. M. Geib, IEEE Photonics Technol. Lett. 8, 1285 (1996), and H. Q. Hou, W. G. Breiland, B. E. Hammons, and H. C. Chui, Electrochemical Society Proc. 96-2, 27 (1996).
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