Dependence of carbon incorporation on growth conditions for unintentionally doped AlGaAs during metalorganic vapor-phase epitaxy

Journal of Crystal Growth

Volumn 204, Issue 1, 1999, Pages 10-18

  Fujii, Katsushi ^a   Satoh, Makoto ^a   Kawamura, Kazushige ^a   Gotoh, Hideki ^a  

^a MITSUBISHI CHEMICAL CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

CARBON INCORPORATION MECHANISMS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0032674764     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00144-X     Document Type: Article

References (16)

1. Jensen K.F., Fotiadis D.I., Mountziaris T.J. J. Crystal Growth. 107:1991;1.
2. Mountziaris T.J., Jensen K.F. J. Electrochem. Soc. 138:1991;2426.
3. Masi M., Simka H., Jensen K.F., Kuech T.F., Potemski R. J. Crystal Growth. 124:1992;483.
4. Kuech T.F., Tischler M.A., Potemski R., Cardone F., Scilla G. J. Crystal Growth. 98:1989;174.
5. Kuech T.F., Redwing J.M. J. Crystal Growth. 145:1994;382.
6. Adachi S. Properties of Aluminum Gallium Arsenide. 1993;292 Inspec, London.
7. Kondo M., Tanahashi T. J. Crystal Growth. 145:1994;390.
8. Breiland W.G., Evans G.H. J. Electrochem. Soc. 138:1991;1806.
9. Thompson A.G., Stall R.A., Zawadzki P., Evans G.H. J. Electron. Mater. 25:1996;1487.
10. Kobayashi N., Makimoto T. Jpn. J. Appl. Phys. 24:1985;L824.
11. Watanabe K., Yamazaki H. Appl. Phys. Lett. 60:1992;847.
12. Adachi S. Properties of Aluminum Gallium Arsenide. 1993;303 Inspec, London.
13. Kuech T.F., Wolford D.J., Veuhoff E., Deline V., Mooney P.M., Potemski R., Bradley J. J. Appl. Phys. 62:1987;632.
14. Terao H., Sunakawa H. J. Crystal Growth. 68:1984;157.
15. Nishizawa J., Kurabayashi T. J. Electrochem. Soc. 130:1983;413.
16. Jones A.C. J. Crystal Growth. 129:1993;728.