In situ investigation of GaAs (0 0 1) intrinsic carbon p-doping in metal-organic vapour phase epitaxy

Journal of Crystal Growth

Volumn 221, Issue 1-4, 2000, Pages 149-155

  Pristovsek, Markus ^a   Han, Bing ^a   Zettler, Jörg Thomas ^a   Richter, Wolfgang ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; METALLORGANIC VAPOR PHASE EPITAXY; PHASE TRANSITIONS; SATURATION (MATERIALS COMPOSITION); SEMICONDUCTOR DOPING; SPECTROSCOPIC ANALYSIS;

REFLECTANCE ANISOTROPY SPECTROSCOPY (RAS);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0034504711     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00675-8     Document Type: Article

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