High C-doping of MOVPE grown thin AlxGa1-xAs layers for AlGaAs/GaAs interband tunneling devices

Journal of Electronic Materials

Volumn 29, Issue 1, 2000, Pages 47-52

  Dimroth, F ^a,b   Schubert, U ^a   Schienle, F ^c   Bett, A W ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

^b UNIVERSITY OF FREIBURG   (Germany)

^c AIXTRON AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; TUNNEL DIODES;

INTERBAND TUNNELING DEVICES;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0033909037     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0093-5     Document Type: Article

References (14)

1. K.A. Bertness, D.J. Friedman, and J.M. Olson, Proc. 1st WCPEC (Piscataway, NJ: IEEE, 1994), p. 1859-1862.
2. Y. Ashizawa, T. Noda, K. Morizuka, M. Asaka, and M. Obara, J. Cryst. Growth 107, 903 (1991).
3. S.A. Stockman, G.E. Hofler, J.N. Baillargeon, K.C. Hsieh, K.Y. Cheng, and G.E. Stillman, Appl. Phys. 72, 981 (1992).
4. N. Watanabe and H. Ito, J. Cryst. Growth 182, 30 (1997).
5. N.I. Buchan, T.F. Kuech, G. Scilla, and F. Cardone, J. Cryst. Growth 110, 405 (1991).
6. T.F. Kuech, M.A. Tischler, P.J. Wang, G. Scilla, R. Potemski, and F. Cardone, Appl. Phys. Lett. 53, 1317 (1988).
7. J. Li and T.F. Kuech, J. Cryst. Growth 170, 292 (1997).
8. T.F. Kuech and J.M. Redwing, J. Cryst. Growth 145, 382 (1994).
9. M. Kondo and T. Tanahashi, J. Cryst. Growth 145, 390 (1994).
10. W.S. Hobson, S.J. Pearton, F. Ren, Y. Cheng, D.M. Kozuch, M. Stavola, and M. Geva, Mater. Sci. & Eng. B B20, 266 (1993).
11. G. Li, M. Petravic, and C. Jagadish, J. Appl. Phys. 79, 3554 (1996).
12. G. Li and C. Jagadish, Solid-State Electron. 41, 1207 (1997).
13. G.C. DeSalvo, J. Appl. Phys. 74, 4207 (1993).
14. P. Basmaji, M. Guittard, A. Rudra, J.F. Carlin, and P. Gibart, J. Appl. Phys. 62, 2103 (1987).