Carbon doping for the GaAs base layer of Heterojunction Bipolar Transistors in a production scale MOVPE reactor

Journal of Crystal Growth

Volumn 221, Issue 1-4, 2000, Pages 53-58

  Brunner, F ^a   Bergunde, T ^a   Richter, E ^a   Kurpas, P ^a   Achouche, M ^a   Maassdorf A ^a   Wurfl J ^a   Weyers, M ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CARRIER CONCENTRATION; GAIN CONTROL; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

CARBON DOPING;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0034509943     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00648-5     Document Type: Article

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