Annealing effect on C-doped InGaAs grown by metalorganic chemical vapor deposition

Journal of Crystal Growth

Volumn 195, Issue 1-4, 1998, Pages 48-53

  Watanabe, Noriyuki ^a   Sarin Kumar, A K ^a   Yamahata, Shoji ^a   Kobayashi, Takashi ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Annealing; Carbon doping; Heterojunction bipolar transistor (HBT); Hydrogen removal; InGaAs; InP; MOCVD

Indexed keywords

ANNEALING; CARBON; CARRIER CONCENTRATION; CARRIER MOBILITY; CRYSTAL LATTICES; HETEROJUNCTION BIPOLAR TRANSISTORS; HYDROGEN; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

OPTICAL QUALITY;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0032477235     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00559-4     Document Type: Article

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