C- and O-incorporation in (AlGa)As epitaxial layers grown by MOVPE using TBAs

Journal of Crystal Growth

Volumn 195, Issue 1-4, 1998, Pages 98-104

  Leu, S ^a   Hohnsdorf F ^a   Stolz, W ^a   Becker, R ^b   Salzmann, A ^b   Greiling, A ^b  

^a PHILIPPS UNIVERSITY MARBURG   (Germany)

^b MOCHEM GmbH   (Germany)

Author keywords

AlGaAs; C incorporation; MOVPE; O incorporation; Tertiarybutylarsine

Indexed keywords

ARSENIC COMPOUNDS; CARBON; CONTAMINATION; METALLORGANIC VAPOR PHASE EPITAXY; ORGANOMETALLICS; OXYGEN; PRESSURE EFFECTS; PURIFICATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION ANALYSIS;

ALUMINUM GALLIUM ARSENIDE; TERTIARYBUTYLARSINE; TRIMETHYLALUMINUM;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0032477102     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00694-0     Document Type: Article

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