Junction depth reduction of ion implanted boron in silicon through fluorine ion implantation

Materials Research Society Symposium - Proceedings

Volumn 610, Issue , 2000, Pages

  Robertson, L S ^a   Warnes, P N ^a   Jones, K S ^a   Earles, S K ^a   Law, M E ^a   Downey, D F ^a   Falk, S ^a   Liu, J ^a  

^a University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMS; BORON; DIFFUSION IN SOLIDS; ELLIPSOMETRY; FLUORINE; ION IMPLANTATION; SECONDARY ION MASS SPECTROMETRY; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

JUNCTION DEPTH REDUCTION; SILICON SELF INTERSTITIALS; TRANSIENT ENHANCED DIFFUSION;

HETEROJUNCTIONS;

EID: 0034439092     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

1. Appl. Phys. Lett.