Diffusion of ion-implanted boron impurities into pre-amorphized silicon

Materials Science in Semiconductor Processing

Volumn 3, Issue 3, 2000, Pages 221-225

  Ohno, Naotsugu ^a   Hara, Tohru ^b   Matsunaga, Yasuhiko ^c   Current, Michael I ^d   Inoue, Morio ^e  

^a INTEL CORPORATION   (United States)

^b HOSEI UNIVERSITY   (Japan)

^c Applied Materials Japan Incorporated   (Japan)

^d Current Scientific   (United States)

^e KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION IN SOLIDS; ION IMPLANTATION; RAPID THERMAL ANNEALING; SEMICONDUCTING BORON;

BORON IMPURITIES;

AMORPHOUS SILICON;

EID: 0034203866     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(00)00036-6     Document Type: Article

References (10)

1. Tsaur B.Y., Anderson C.H. Jr. J Appl Phys. 54:1983;6336.
2. Crook J.P., Current M.I., Adibi B., Leung S., Larson L.A. Nucl Instr and Meth B. 22:1991;593.
3. Current MI. In: Takagi T, editor. Proceedings of the 14th Symposium on Ion Sources and Ion-Assisted Technology, (ISIAT'91), Tokyo, June 1991. p. 3443.
4. Current M.I., Inoue M., Nakashima S., Ohno N., Kuribara M., Matsunaga Y., Hara T., Wagner D., Leung S., Adibi B., Lecouras G., Larson L.A. Nucl Instr and Meth B. 74:1993;175.
5. Kuroi T, Komori S, Fukumoto K, Mashiko Y, Tsukamoto K, Akasaka Y. Extended abstract of solid state devices and materials - 1991, vol. 56, Yokohama, August 1991.
6. Current M.I., Ohno N., Hara T. Nucl Instr and Meth B. 121:1997;262.
7. Ziegler JF. Ion implantation physics. In: Ziegler JF, editor. Ion implantation science and technology, vol. 125, 1996.
8. Agarwal A., Gossmann H.J., Eaglesham D.J., Pelaz L., Herner S.B., Jacobson D.C., Haynes T.E., Simonton R. Mater Sci Semiconductor Process. 1(1):1998;17.
9. Wilson R.G. J Appl Phys. 54(12):1983;6879.
10. Chu C.H., Jang J.J., Chen L.J. Nucl Instr and Meth B. 74:1993;138.