Fluorine Implantation Impact in Extension Region on the Electrical Performance of Sub-50nm P-MOSFETs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 485-488

  Fukutome, H ^a   Momiyama, Y ^a   Nakao, H ^a   Aoyama, T ^a   Arimoto, H ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; ANNEALING; DIFFUSION; ELECTRIC CURRENTS; ELECTRODES; FLUORINE; GATES (TRANSISTOR); ION IMPLANTATION; MATHEMATICAL MODELS; SCANNING TUNNELING MICROSCOPY; SILICON NITRIDE;

BAND BENDING; GATE ELECTRODES;

MOSFET DEVICES;

EID: 0842309771     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

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