Annealing temperature effect on the performance of nonvolatile HfO 2 Si-oxide-nitride-oxide-silicon-type flash memory

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 24, Issue 3, 2006, Pages 682-685

  Lin, Yu Hsien ^a   Chien, Chao Hsin ^a,b   Chang, Chun Yen ^a   Lei, Tan Fu ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTALLIZATION; ELECTRON ENERGY LEVELS; ELECTRON TRAPS; FLASH MEMORY; SILICON COMPOUNDS; THERMAL EFFECTS;

GATE DISTURBANCES; POSTDEPOSITION ANNEALING; SHALLOWER ENERGY LEVELS; SI-OXIDE-NITRIDE-OXIDE-SILICON-TYPE FLASH MEMORY;

HAFNIUM COMPOUNDS;

EID: 33646587724     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2174021     Document Type: Article

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