Nonvolatile low-temperature polycrystalline silicon thin-film-transistor memory devices with oxide-nitride-oxide stacks

Applied Physics Letters

Volumn 90, Issue 18, 2007, Pages

  Liu, Po Tsun ^a   Huang, C S ^a   Chen, C W ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b AU OPTRONICS CORPORATION   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TUNNELING; PARTICLE BEAM INJECTION; POLYSILICON; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE;

FOWLER-NORDHEIM TUNNELING SCHEME; GLASS SUBSTRATES; NONVOLATILE MEMORY DEVICES; PROGRAMMING VOLTAGE;

DATA STORAGE EQUIPMENT;

EID: 34247869846     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2736293     Document Type: Article

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