Fabrication and characterization of EEPROM arrays on glass using a low-temperature poly-Si TFT process

IEEE Transactions on Electron Devices

Volumn 43, Issue 11, 1996, Pages 1930-1935

  Young, N D ^a   Harkin, G ^a   Bunn, R M ^a   McCulloch, D J ^a   French, I D ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; GLASS; LASER APPLICATIONS; ROM; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA; SILICON NITRIDE; SUBSTRATES; THIN FILM TRANSISTORS;

ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY (EEPROM); PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD);

SEMICONDUCTOR STORAGE;

EID: 0030284578     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.543029     Document Type: Article

References (14)

1. W. Eccleston P. J. Rosser The effects of gate and drain biases on the stability of low-temperature poly-Si TFT's ESSDERC'90 303 306 1990 Adam Hilger Bristol
2. J. R. Ayres N. D. Young Hot carrier effects in devices and circuits formed from poly-Si IEE Proc. Circuits Devices Syst 141 1 38 1994 2190 6876 278071
3. S. Morozumi K. Oguchi T. Misawa R. Araki H. Ohshima 4.24 $''$ and 1.52 $''$ B/W and full color video display addressed by poly-Si TFT's SID'84 Digest 316 319 1984 Palisades New York
4. S. D. Brotherton N. D. Young M. J. Edwards A. Gill M. J. Trainor J. R. Ayres I. R. Clarence R. M. Bunn J. P. Gowers Low-temperature furnace processed poly-Si TFT AMLCD's 1994 IDRC 130 133 1994 SID CA, Santa Ana
5. A. Kohno T. Sameshima N. Sano M. Sekiya M. Hare High performance poly-Si TFT's fabricated using pulsed laser annealing and plasma CVD with low-temperature processing IEEE Trans. Electron Devices 42 2 251 1995 16 8484 370072
6. J. P. Collinge Fabrication and characterization of poly-Si TFT's on glass Physical and Technical Problems of SOI Structures and Devices 183 198 1995 Kluwer Netherlands
7. S. D. Brotherton D. J. McCulloch M. J. Edwards Beam shape effects with excimer laser crystallization of PECVD and LPCVD amorphous silicon Solid State Phenomena 37 8 299 1994
8. N. D. Young A. Gill M. J. Edwards Hot carrier degradation in low-temperature processed poly-Si TFT's Semicond. Sci. and Technol. 7 1183 1992
9. M. J. Edwards S. D. Brotherton J. R. Ayres D. J. McCulloch J. P. Gowers Laser crystallised poly-Si circuits for AMLCD's Asia Display 1995 335 338 1995 SID CA, Santa Ana
10. M. J. Powell C. van Berkel J. R. Hughes Time and temperature dependence of instability mechanisms in amorphous silicon TFT's Appl. Phys. Lett. 54 14 1323 1989
11. T. Maekawa Y. Nakayama Y. Nakajima M. Ino H. Kaneko M. Satoh M. Kobayashi A 1.35 $''$ diagonal wide aspect ratio poly-Si TFT LCD with 523 k pixels 1994 IDRC 414 417 1994 SID CA, Santa Ana
12. G. Barbottin A. Vapaille Instabilities in double insulating layer structures, applications to MNOS devices Instabilities in Silicon Devices 2 1986 North Holland Amsterdam 16
13. N. D. Young A. Gill Water related instability in TFT's formed using deposited gate oxides Semicond. Sci. and Technol. 7 1103 1992
14. D. Khang Nonvolatile memories Appied Solid State Science Suppl. 2A. 1981 Academic New York