Fast deposition of microcrystalline Si films from SiH2Cl2 using a high-density microwave plasma source for Si thin-film solar cells

Solar Energy Materials and Solar Cells

Volumn 94, Issue 3, 2010, Pages 524-530

  Kumar Saha, Jhantu ^a   Ohse, Naoyuki ^a   Hamada, Kazu ^a   Matsui, Hiroyuki ^a   Kobayashi, Tomohiro ^b   Jia, Haijun ^c   Shirai, Hajime ^a  

^a SAITAMA UNIVERSITY   (Japan)

^b INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

c Si; Cl; H; High density plasma; Microwave plasma; SiH2Cl2; SiH4

Indexed keywords

CRYSTALLINE SILICONS; FAST DEPOSITION; GROWING SURFACES; HIGH DENSITY PLASMAS; HIGH-DENSITY; HIGH-DENSITY MICROWAVE PLASMAS; HYDROGEN ATOMS; INTRINSIC LAYER; LOW TEMPERATURES; MICROCRYSTALLINE SI; MICROWAVE PLASMA SOURCES; SI FILMS; THIN-FILM SOLAR CELLS;

AMORPHOUS FILMS; CHLORINE; FILM GROWTH; MICROWAVES; PERMITTIVITY; PLASMA DEPOSITION; PLASMA SOURCES; SOLAR CELLS; THIN FILM DEVICES; TITRATION; VOID FRACTION;

AMORPHOUS SILICON;

EID: 75149171329     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2009.11.017     Document Type: Article

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