Silane versus silicon tetrafluoride in the growth of microcrystalline silicon films by standard radio frequency glow discharge

Thin Solid Films

Volumn 515, Issue 19 SPEC. ISS., 2007, Pages 7451-7454

  Djeridane, Y ^a   Abramov, A ^a,b   Roca i Cabarrocas, P ^a  

^a LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

Growth mechanism; Microcrystalline silicon; Plasma processing and deposition; Structural properties

Indexed keywords

ELECTRONIC PROPERTIES; FILM GROWTH; GLOW DISCHARGES; MICROCRYSTALLINE SILICON; NANOCRYSTALS; PLASMA APPLICATIONS; RAMAN SPECTROSCOPY; SPECTROSCOPIC ELLIPSOMETRY;

GROWTH MECHANISM; INTER-ELECTRODE DISTANCE; SILICON TETRAFLUORIDE; TIME RESOLVED MICROWAVE CONDUCTIVITY (TRMC);

THIN FILMS;

EID: 34547559706     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.11.112     Document Type: Article

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