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Volumn 352, Issue 9-20 SPEC. ISS., 2006, Pages 896-900
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Toward the fast deposition of highly crystallized microcrystalline silicon films with low defect density for Si thin-film solar cells
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Author keywords
Chemical vapor deposition; Conductivity; Crystal growth; Electron spin resonance; Ellipsometry; Microcrystallinity; Optical spectroscopy; Photoconductivity; Plasma deposition; Raman scattering; Raman spectroscopy; Silicon; Solar cells; X ray diffraction
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Indexed keywords
CHEMICAL VAPOR DEPOSITION;
CRYSTAL GROWTH;
CRYSTALLIZATION;
ELECTRIC CONDUCTIVITY;
ELLIPSOMETRY;
PARAMAGNETIC RESONANCE;
PHOTOCONDUCTIVITY;
PLASMAS;
RAMAN SCATTERING;
RAMAN SPECTROSCOPY;
SOLAR CELLS;
THIN FILMS;
X RAY DIFFRACTION;
MICROCRYSTALLINITY;
OPTICAL SPECTROSCOPY;
PLASMA DEPOSITION;
PLASMA PARAMETERS;
SEMICONDUCTING SILICON;
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EID: 33744526336
PISSN: 00223093
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jnoncrysol.2005.12.032 Document Type: Article |
Times cited : (9)
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References (15)
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