High rate growth highly crystallized microcrystalline silicon films using SiH4/H2 high-density microwave plasma

Thin Solid Films

Volumn 515, Issue 9, 2007, Pages 4098-4104

  Saha, Jhantu K ^a   Jia, Haijun ^a   Ohse, Naoyuki ^a   Shirai, Hajime ^a  

^a SAITAMA UNIVERSITY   (Japan)

Author keywords

c Si; Defect density; High density plasma

Indexed keywords

CRYSTALLIZATION; ION BOMBARDMENT; LOW TEMPERATURE OPERATIONS; PLASMAS; SILICON; SURFACE CHEMISTRY;

DEFECT DENSITY; HIGH DENSITY MICROWAVE PLASMA; INCUBATION; MICROCRYSTALLINE SILICON; RAMAN CRYSTALLINITY;

THIN FILMS;

EID: 33847020839     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.02.062     Document Type: Article

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