Loss of phosphorus due to segregation at SiSi O2 interfaces: Experiments and modeling

Journal of Applied Physics

Volumn 103, Issue 5, 2008, Pages

  Chang, R D ^a   Tsai, J R ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; INTERFACES (MATERIALS); MATHEMATICAL MODELS; SEGREGATION (METALLOGRAPHY); SILICON COMPOUNDS;

PHOSPHORUS SEGREGATION; SURFACE CONCENTRATION;

PHOSPHORUS;

EID: 40849102756     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2894590     Document Type: Article

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