Influence of surface atom arrangement on the growth of InN layers on GaAs (1 1 1)A and (1 1 1)B surfaces by metalorganic vapor-phase epitaxy

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 387-389

  Murakami, Hisashi ^a   Torii, Jun ichi ^a   Kumagai, Yoshinao ^a   Koukitu, Akinori ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

A1. Surface structure; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting indium compounds

Indexed keywords

METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES; SURFACE STRUCTURE;

CRYSTALLINE QUALITY; POLARITY; SURFACE ATOM ARRANGEMENT;

EPITAXIAL GROWTH;

EID: 33846453311     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.051     Document Type: Article

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