Influence of lattice polarity on wurzite GaN {0 0 0 1} decomposition as studied by in situ gravimetric monitoring method

Journal of Crystal Growth

Volumn 237-239, Issue 1 4II, 2002, Pages 1143-1147

  Mayumi, Miho ^a   Satoh, Fumitaka ^a   Kumagai, Yoshinao ^a   Takemoto, Kikurou ^b   Koukitu, Akinori ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^b SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

A1. Etching; A1. Surface processes; A3. Vapor phase epitaxy; B1. Nitrides; B2. Semiconducting gallium compounds

Indexed keywords

CRYSTAL LATTICES; DECOMPOSITION; FILM GROWTH; GALLIUM NITRIDE; GRAVIMETRIC ANALYSIS; PARTIAL PRESSURE; RATE CONSTANTS; SEMICONDUCTING GALLIUM COMPOUNDS; SURFACE PHENOMENA; THERMAL EFFECTS;

LATTICE POLARITY;

VAPOR PHASE EPITAXY;

EID: 0036530473     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02072-3     Document Type: Article

References (10)