Fe-doped semi-insulating GaN substrates prepared by hydride vapor-phase epitaxy using GaAs starting substrates

Journal of Crystal Growth

Volumn 296, Issue 1, 2006, Pages 11-14

  Kumagai, Yoshinao ^a   Satoh, Fumitaka ^a   Togashi, Rie ^a   Murakami, Hisashi ^a   Takemoto, Kikurou ^a   Iihara, Junji ^b   Yamaguchi, Koji ^b   Koukitu, Akinori ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^b SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

A1. Doping; A2. Growth from vapor; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Semiconducting gallium compounds

Indexed keywords

GAAS SUBSTRATES; GROWTH FROM VAPOR; HYDRIDE VAPOR PHASE EPITAXY; X RAY ABSORPTION;

ELECTRIC CONDUCTIVITY; HYDRIDES; IRON; NITRIDES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; VAPOR PHASE EPITAXY; X RAY DIFFRACTION;

GALLIUM NITRIDE;

EID: 33749577619     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.08.027     Document Type: Article

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