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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 1519-1522

A comparative study on MOVPE InN grown on Ga- and N-polarity bulk GaN

(4) Wang, W J a Miwa, H a Hashimoto, A a Yamamoto, A a

a UNIVERSITY OF FUKUI (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GAN; HEXAGONAL SHAPE CRYSTAL GRAINS; INN; SINGLE CRYSTALLINE; 68.37.HK; 68.55.JK; 78.55.CR; 81.05.EA; 81.15.GH;

EPITAXIAL GROWTH; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; SAPPHIRE; SINGLE CRYSTALS; THERMAL EFFECTS; THIN FILMS; FILM GROWTH; INDIUM; OPTICAL PROPERTIES; SEMICONDUCTING SAMARIUM COMPOUNDS; SUBSTRATES;

SEMICONDUCTING INDIUM COMPOUNDS; GALLIUM ALLOYS;

EID: 33746375025 PISSN: 18626351 EISSN: None Source Type: Journal
DOI: 10.1002/pssc.200565176 Document Type: Conference Paper

Times cited : (5)

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