Modeling the charge transport mechanism in amorphous Al2O3 with multiphonon trap ionization effect

Microelectronics Reliability

Volumn 50, Issue 2, 2010, Pages 207-210

  Novikov, Yu N ^a   Vishnyakov, A V ^a   Gritsenko, V A ^a   Nasyrov, K A ^b   Wong, H ^c  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b INSTITUTE OF AUTOMATION AND ELECTROMETRY   (Russian Federation)

^c CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS ALUMINA; CHARGE TRANSPORT; CHARGE TRANSPORT MECHANISMS; DEEP TRAPS; DENSITY OF ELECTRONS; ELECTRON EFFECTIVE MASS; ELECTRON-CAPTURE CROSS SECTIONS; FRENKEL EFFECT; IONIZATION EFFECT; IONIZATION ENERGIES; MEASURED DATA; MULTIPHONONS; MULTIPHOTONS; PHONON ENERGIES; TEMPERATURE DEPENDENCIES; THERMAL IONIZATION ENERGY; THERMALLY-ASSISTED TUNNELING; TRAPPING PARAMETER;

ALUMINUM; PARTICLE DETECTORS; TUNNELING (EXCAVATION); WIND TUNNELS;

IONIZATION;

EID: 74449087715     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2009.11.004     Document Type: Article

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