Single band electronic conduction in hafnium oxide prepared by atomic layer deposition

Microelectronics Reliability

Volumn 47, Issue 1, 2007, Pages 36-40

  Shaimeev, Sergey ^a   Gritsenko, Vladimir ^a   Kukli, Kaupo ^b   Wong, Hei ^c   Lee, Eun Hong ^d   Kim, Chungwoo ^d  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b UNIVERSITY OF HELSINKI   (Finland)

^c CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^d Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; ELECTRIC CURRENTS; ELECTRIC INSULATORS; ELECTRODES; HEAT CONDUCTION; MOS DEVICES;

CAPACITANCE-VOLTAGE MEASUREMENTS; HOLE INJECTION; N-TYPE SUBSTRATE; NEGATIVE BIASING;

HAFNIUM COMPOUNDS;

EID: 33845415792     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2006.03.002     Document Type: Article

References (25)

1. Wilk G.D., Wallace R.M., and Anthony J.M. High-k gate dielectrics: current status and materials properties considerations. J Appl Phys 89 (2001) 5243-7275
2. 2. Appl Phys Lett 80 (2002) 1897-1899
3. Gusev E.P., Cartier E., Buchanan D.A., Gribelyuk M., Copel M., Okorn-Schmidt H., et al. Ultrathin high-k metal oxide on silicon: processing, characterization and integration issues. Microelectron Eng 59 (2001) 341-349
4. Zhan N., Ng K.L., Poon M.C., Kok C.W., and Wong H. XPS study of the thermal instability of hafnium oxide prepared by Hf sputtering in oxygen with rapid thermal annealing. J Electrochem Soc 150 (2003) F200-F202
5. 2 precursor combination. Thin Solid Films 427 (2003) 147-151
6. 2. Appl Phys Lett 81 (2002) 1053-1055
7. 1-x on (1 0 0) Si. Appl Phys Lett 81 (2002) 376-378
8. Afanas'ev V.V., Stesmans A., and Tsai W. Determination of interface energy band diagram between (1 0 0)Si and mixed Al-Hf oxides using internal electron photoemission. Appl Phys Lett 82 (2003) 245-247
9. 2O gate dielectric deposited via tetrakis diethylamido hafnium. J Electrochem Soc 150 (2003) F67
10. Gritsenko V.A. Electronic structure and optical properties of silicon nitride. Silicon nitride in electronics (1986), Elsevier, New York
11. Lee B.H., Kang L., Nieh R., Qi W.-J., and Lee J.C. Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing. Appl Phys Lett 76 (2000) 1926-1928
12. Wong H., Ng K.L., Zhan N., Poon M.C., and Kok C.W. Interface bonding structure of hafnium oxide prepared by direct sputtering of hafnium in oxygen. J Vac Sci Technol B 22 (2004) 1094-1100
13. Ginovker A.S., Gritsenko V.A., and Sinitsa S.P. Two band conduction of amorphous silicon nitride. Phys Stat Sol B 26 (1974) 489-495
14. Hielscher F.H., and Preier H.M. Non-equilibrium C-V and I-V characteristics of metal-insulator-semiconductor capacitors. Solid-State Electron 12 (1969) 527-538
15. Ginovker A.S., Gritsenko V.A., and Sinitsa S.P. Stationary current in MNOS structures. Microelectronics 2 (1973) 283-289 (in Russian)
16. Gritsenko V.A., and Meerson E.E. On silicon nitride conductivity. Phys Stat Sol A 62 (1980) K131
17. 4 films. Solid-State Electron 30 (1987) 1295-1301
18. Kukli K., Ritala M., Sajavaara T., Keinonen J., and Leskelä M. Comparison of hafnium oxide films grown by atomic layer deposition from iodide and chloride precursors. Thin Solid Films 416 (2002) 72-79
19. Ylilammi M., and Ranta-aho T. Optical determination of the film thickness in multilayer thin film structures. Thin Solid Films 232 (1993) 56-62
20. Kukli K., Ritala M., Leskelä M., Sajavaara T., Keinonen J., Gilmer D.C., et al. J Mater Sci: Mater Electr 14 (2003) 361
21. Voskoboinikov V.V., Gritsenko V.A., Efimov V.M., Lesnikovskaja V.E., and Edelman F.L. Structure and electrophysical properties of boron nitride thin films. Phys Stat Sol A 34 (1976) 85-94
22. Zhu W.J., Ma T.-P., Tamagawa T., Kim J., and Di Y. Current transport in metal/hafnium/oxide/silicon structure. IEEE Electron Device Lett 23 (2002) 97-99
23. 4interface and energy band diagram of metal-nitride-oxide-semiconductor structures. Phys Rev B 57 (1997) R2081-R2083
24. Wong H., and Cheng Y.C. Electronic conduction mechanism in thin oxynitride films. J Appl Phys 70 (1991) 1078-1080
25. Wong H., Han P.G., and Poon M.C. Study of grain boundary tunneling in barium titanate ceramic films. J Korean Phys Soc 35 (1999) S196-S199