Temperature-dependent ferroelectric and dielectric properties of Bi 3.25 La 0.75 Ti 3 O 12 thin films

Applied Surface Science

Volumn 256, Issue 8, 2010, Pages 2468-2473

  Zhang, Shan Tao ^a   Chen, Zhong ^a   Zhang, Chong ^a   Yuan, Guo Liang ^b  

^a NANJING UNIVERSITY   (China)

^b NANJING UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Domain switching; Ferroelectric; Temperature; Thin films

Indexed keywords

BISMUTH COMPOUNDS; DIELECTRIC PROPERTIES OF SOLIDS; ELECTRIC FIELDS; FERROELECTRIC FILMS; FERROELECTRIC MATERIALS; FERROELECTRICITY; LANTHANUM COMPOUNDS; PLATINUM COMPOUNDS; POLARIZATION; PULSED LASER DEPOSITION; TEMPERATURE; TEMPERATURE DISTRIBUTION; TITANIUM COMPOUNDS;

DIELECTRIC MEASUREMENTS; DOMAIN SWITCHINGS; DOMAIN WALL INTERACTIONS; FERROELECTRIC AND DIELECTRIC PROPERTIES; REMNANT POLARIZATIONS; SATURATED POLARIZATION; TEMPERATURE DEPENDENCE; WIDE TEMPERATURE RANGES;

THIN FILMS;

EID: 74149087237     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.10.089     Document Type: Article

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