Electrical properties of SrBi2Ta2O9 ferroelectric thin films at low temperature

Applied Physics Letters

Volumn 81, Issue 24, 2002, Pages 4583-4585

  Yang, Pingxiong ^a   Carroll, David L ^a   Ballato, John ^a   Schwartz, Robert W ^b  

^a AMRL   (United States)

^b MISSOURI UNIVERSITY OF SCIENCE AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; ELECTRODES; FATIGUE OF MATERIALS; FERROELECTRICITY; LEAKAGE CURRENTS; SILICON WAFERS; STRONTIUM COMPOUNDS;

ELECTRIC FIELD CYCLING;

THIN FILMS;

EID: 0037049573     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1527700     Document Type: Article

References (22)

1. J.F. Scott and C.A. Araujo, Science 246, 1400 (1989).
2. O. Auciello, J.F. Scott, and R. Ramesh, Phys. Today 51, 22 (1998).
3. B.H. Park, B.S. Kang, S.D. Bu, T.W. Noh, J. Lee, and W. Jo, Nature (London) 401, 682 (1999).
4. C.A.P. de Araujo, J.D. Cuchiare, L.D. McMillan, M.C. Scott, and J.F. Scott, Nature (London) 374, 627 (1995).
5. H.N. Al-Shareef, D. Dimos, T.J. Boyle, W.L. Warren, and B.A. Tuttle, Appl. Phys. Lett. 68, 690 (1996).
6. D. Dimos, H.N. Al-Shareef, W.L. Warren, and B.A. Tuttle, J. Appl. Phys. 80, 1682 (1996).
7. S. Kim, D.J. Kim, J.-P. Maria, A.I. Kingon, S.K. Streiffer, J. Im, O. Auciello, and A.R. Krauss, Appl. Phys. Lett. 76, 496 (2000).
8. J. Im, A.R. Krauss, A.M. Dhote, D.M. Gruen, O. Auciello, R. Ramesh, and R.P.H. Chang, Appl. Phys. Lett. 72, 2529 (1998).
9. O. Auciello, A.R. Krauss, J. Im, D.M. Gruen, E.A. Irene, R.P.H. Chang, and G.E. McGuire, Appl. Phys. Lett. 69, 2671 (1996).
10. K. Takemura, T. Noguchi, T. Hase, and Y. Miyasaka, Appl. Phys. Lett. 73, 1649 (1998).
11. D.J. Taylor, R.E. Jones, P. Zurcher, P. Chu, Y.T. Lii, B. Jiang, and S.J. Gillespie, Appl. Phys. Lett. 68, 2300 (1996).
12. F. Yan, Y. Wang, J. Liu, Z. Zhang, and X. Chen, Appt. Phys. Lett. 74, 2794 (1999).
13. F. Yan, X. Chen, P. Bao, Y. Wang, and J. Liu, J. Appl. Phys. 87, 1453 (2000).
14. P. Yang, N. Zhou, L. Zheng, H. Lu, and C. Lin, J. Phys. D 30, 527 (1997).
15. R. Dat, J.K. Lee, O. Auciello, and A.I. Kingon, Appl. Phys. Lett. 67, 572 (1995).
16. A.C. Rastogi, S. Tirumala, and S.B. Desu, Appl. Phys. Lett. 74, 3492 (1999).
17. L. Zheng, C. Lin, W. Xu, and M. Okuyama, J. Appl. Phys. 79, 8634 (1996); L. Zheng, C. Lin, and T.P. Ma, J. Phys. D 29, 457 (1996).
18. L. Zheng, C. Lin, W. Xu, and M. Okuyama, J. Appl. Phys. 79, 8634 (1996); L. Zheng, C. Lin, and T.P. Ma, J. Phys. D 29, 457 (1996).
19. S. Kamba, J. Pokorny, V. Porokhonskyy, J. Petzelt, M.P. Moret, A. Garg, Z.H. Barber, and R. Zallen, Appl. Phys. Lett. 81, 1056 (2002).
20. T. Hauke, V. Mueller, H. Beige, and J. Fousek, Phys. Rev. B 57, 10424 (1998).
21. S.L. Miller, R.D. Nasby, J.R. Schwank, M.S. Rodgers, and P.V. Dressendorfer, J. Appl. Phys. 68, 6463 (1990); S.L. Miller, J.R. Schwank, R.D. Nasby, and M.S. Rodgers, J. Appl. Phys. 70, 2849 (1991).
22. S.L. Miller, R.D. Nasby, J.R. Schwank, M.S. Rodgers, and P.V. Dressendorfer, J. Appl. Phys. 68, 6463 (1990); S.L. Miller, J.R. Schwank, R.D. Nasby, and M.S. Rodgers, J. Appl. Phys. 70, 2849 (1991).