Temperature-dependent fatigue behaviors of ferroelectric Bi4-x Lax Ti3 O12 thin films

Integrated Ferroelectrics

Volumn 79, Issue 1, 2006, Pages 37-45

  WANG, Y ^a,b   ZHU, C ^a,b   WU, X M ^a,b   LIU, J M ^a,b  

^a NANJING UNIVERSITY   (China)

^b INTERNATIONAL CENTRE FOR MATERIALS PHYSICS   (China)

Author keywords

BLTx thin film; Fatigue; Ferroelectrics

Indexed keywords

BISMUTH COMPOUNDS; DIFFUSION; DOPING (ADDITIVES); FATIGUE OF MATERIALS; HYSTERESIS; LANTHANUM; SOL-GELS; SWITCHING; THERMAL EFFECTS;

BLTX THIN FILMS; HYSTERESIS LOOPS; ROOM TEMPERATURE; TEMPERATURE-DEPENDENT FATIGUE;

FERROELECTRIC THIN FILMS;

EID: 33745740645     PISSN: 10584587     EISSN: 16078489     Source Type: Journal    
DOI: 10.1080/10584580600657229     Document Type: Article

References (30)

1. O. Auciello, J. F. Scott, and R. Ramesh, "The Physics of Ferroelectric Memories," Phys. Today 51, 22-27 (1998).
2. J. F. Scott and C. A. Araujo, "Ferroelectric Memories," Science 246, 1400-1405 (1989).
3. C. A. Araujo, J. D. Cuchiaro, L. D. McMillan, M. C. Scott, and J. F. Scott, "Fatigue-Free Ferroelectric Capacitors with Platinum Electrodes," Nature 374, 627-629 (1995).
4. 9 Ferroelectric Thin Films. Appl. Phys. Lett. 75, 2827-2829 (1999).
5. 3 Ferroelectric Films," J. Appl. Phys. 92, 6756-6761 2002.
6. M. Dawber and J. F. Scott, "A Model for Fatigue in Ferroelectric Perovskite Thin Films," Appl. Phys. Lett. 76, 1060-1062 (2000).
7. M. Dawber and J. F. Scott, Addendum: "A Model for Fatigue in Ferroelectric Perovskite Thin Films" [Appl. Phys. Lett. 76, 1060 (2000)].
8. Appl. Phys. Lett. 76, 3655 (2000).
9. 3 Thin Films and its Role in Fatigue," Appl. Phys. Lett. 65, 1018-1020 (1994).
10. J. Lee, S. Esayan, A. Safari, and R. Ramesh, "Effect of Ultraviolet Light on Fatigue of Lead Zirconate Titanate Thin-Film Capacitors," Appl. Phys. Lew. 65, 254-256 (1994).
11. A. K. Tagantsev, M. Landivar, E. Colla, and N. Setter, "Identification of Passive Layer in Ferroelectric Thin Films from their Switching Parameters," J. Appl. Phys. 78, 2623-2630 (1995).
12. 12 Thin Films Prepared by Chemical Solution Deposition," J. Appl. Phys. 88, 5941-5945 (2000).
13. B. H. Park, B. S. Kang, S.D. Bu, T. W. Noh, J. Lee, and W. Jo, "Lanthanum-Substituted Bismuth Titanate for Use in Non-Volatile Memories. Nature 401, 682-684 (1999).
14. 9," Appl. Phys. Lett. 68, 690-692 (1996).
15. 3 Thin Films," J. Appl. Phys. 80, 1682-1687 (1996).
16. D. Wu, A. D. Li, T. Zhu, Z. F. Li, Z. G. Liu, and N. B. Ming, "Processing- and Composition-Dependent Characteristics of Chemical Solution Deposited Bi4-xLaxTi3O12 Thin Films," J. Mater. Res. 16, 1325-1332 (2001).
17. 12 Thin Films," Appl. Phys. Lett. 84, 3660-3662 (2004).
18. T. Takenaka and K. Sakata, "Electrical Properties of Grain-Oriented Ferroelectric Ceramics in Some Lanthanum Modified Layer-Structure Oxides," Ferroelectrics 38, 769-772 (1981).
19. M. H. Lente, A. Picinin, J. P. Rino, and J. A. Eiras, "90° Domain Wall Relaxation and Frequency Dependence of the Coercive Field in the Ferroelectric Switching Process," J. Appl. Phys. 95, 2646-2653 (2004).
20. 3-Type and Layered Perovskite Oxide Thin Films," Appl. Phys. Lett. 84, 3352-3354 (2004).
21. J. F. Scott and M. Dawber, "Oxygen-Vacancy Ordering as a Fatigue Mechanism in Perovskite Ferroelectrics," Appl. Phys. Lett. 76, 3801-3803 (2000).
22. 9 Ferroelectric Thin Films at Low Temperature," Appl. Phys. Lett. 81, 4583-4585 (2002).
23. 3 Tin Films with Various Crystalline Qualities," Appl. Phys. Lett. 68, 484-486 (1996).
24. 2-x," Appl. Phys. Lett. 69, 185-187 (1996).
25. A. Q. Jiang, Z. X. Hu, and L. D. Zhang, "A Self-Assembled Microlensing Rotational Probe," Appl. Phys. Lett. 74, 144-146 (1999).
26. 2," Appl. Phys. Lett. 74, 1907-1909 (1999).
27. 12(x = 0, 0.5, 0.75, 1.0, 1.5, and 2.0)," J. Appl. Phys. 91, 3178-3187 (2002).
28. Y. Y. Yao, C. H. Song, P. Bao, D. Su, X. M. Lu, J. S. Zhu, and Y. N. Wang, "Doping Effect on the Dielectric Property in Bismuth Titanate," J. Appl. Phys. 95, 3126-3130 (2004).
29. Y. Ding, J. S. Liu, H. X. Qin, J. S. Zhu, and Y. N. Wang, "Why Lanthanum-Substituted Bismuth Titanate becomes Fatigue Free in a Ferroelectric Capacitor with Platinum Electrodes," Appl. Phys. Lett. 78, 4175-4177 (2001).
30. 9 Ceramics," J. Appl. Phys. 93, 4784-4787 (2003).