Temperature-dependent effect of oxygen vacancy on polarization switching of ferroelectric Bi3.25La0.75Ti3O12 thin films

Solid State Communications

Volumn 132, Issue 5, 2004, Pages 315-318

  Zhang, Shan Tao ^a   Yuan, Guo Liang ^a   Wang, Jia ^a   Chen, Yan Feng ^a   Cheng, Guang Xu ^a   Liu, Zhi Guo ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

A: Ferroelectric thin films; C: Oxygen vacancy; D: Hysteresis loop

Indexed keywords

DEPOSITION; ELECTRIC FIELDS; ELECTRODES; MATHEMATICAL MODELS; OXYGEN; POLARIZATION; PULSED LASER DEPOSITION; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SWITCHING; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS;

HYSTERISIS LOOPS; OXYGEN VACANCY; RAMAN VIBRATION MODES; TEMPERATURE-DEPENDENT DEPTHS;

FERROELECTRIC THIN FILMS;

EID: 4544333959     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2004.07.072     Document Type: Article

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