The effect of deposition temperature and postanneal on the Bi 3.63Pr0.3Ti3O12 thin Films prepared by RF-magnetron sputtering method

Journal of the American Ceramic Society

Volumn 92, Issue 2, 2009, Pages 501-505

  Wu, Yunyi ^a   Zhang, Duanming ^a   Yu, Jun ^a   Wang, Yunbo ^a  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRODEPOSITION; FERROELECTRIC FILMS; MAGNETRONS; OXYGEN; OXYGEN VACANCIES; PRASEODYMIUM; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES; THERMAL EFFECTS; THIN FILMS;

APPLIED FIELDS; CURRENT CHARACTERISTICS; DC LEAKAGE CURRENTS; DEPOSITED FILMS; DEPOSITION TEMPERATURES; FATIGUE RESISTANCES; FERROELECTRIC FATIGUES; LEAKAGE CURRENT DENSITIES; OXYGEN VACANCY CONCENTRATIONS; POLYCRYSTALLINE FILMS; POST-ANNEAL; PREFERRED ORIENTATIONS; RAMAN MEASUREMENTS; REMNANT POLARIZATIONS; RF- MAGNETRON SPUTTERING; SI SUBSTRATES; SUBSTRATE TEMPERATURES; VIBRATION MODES;

FILM PREPARATION;

EID: 60849134823     PISSN: 00027820     EISSN: 15512916     Source Type: Journal    
DOI: 10.1111/j.1551-2916.2008.02884.x     Document Type: Article

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