Epitaxial growth and planar dielectric properties of compositionally graded (Ba1-xSrx)TiO3 thin films prepared by pulsed-laser deposition

Applied Physics Letters

Volumn 80, Issue 18, 2002, Pages 3376-3378

  Zhu, Xinhua ^a   Chong, Nui ^a   Chan, Helen Lai Wah ^a   Choy, Chung Loong ^a   Wong, Kin Hung ^a   Liu, Zhiguo ^b   Ming, Naiben ^b  

^a HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

^b NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED ELECTRIC FIELD; APPLIED VOLTAGES; BST FILM; COMPOSITIONAL GRADIENTS; DC BIAS VOLTAGE; DIELECTRIC RESPONSE; DIFFUSE PHASE TRANSITIONS; FUNCTION OF FREQUENCY; GRADED FILMS; GRADED STRUCTURE; INTERDIGITAL ELECTRODE; LOW-TEMPERATURE DEPENDENCE; MGO SUBSTRATE; RESIDUAL STRAINS; ROOM TEMPERATURE; TEMPERATURE REGIMES; THIN-FILM CAPACITORS; TIO; TUNABILITIES;

BARIUM; CAPACITORS; DEPOSITION; DIELECTRIC LOSSES; ELECTRIC FIELDS; EPITAXIAL GROWTH; PULSED LASER DEPOSITION; PULSED LASERS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; THIN FILM CIRCUITS; VAPOR DEPOSITION;

EPITAXIAL FILMS;

EID: 79956045865     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1475367     Document Type: Article

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