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Volumn , Issue , 2009, Pages 415-422

Measurement and analysis of contact plug resistance variability

Author keywords

[No Author keywords available]

Indexed keywords

90NM CMOS; CIRCUIT DESIGNS; CIRCUIT PERFORMANCE; COMPACT MODEL; DEVICES UNDER TESTS; DIFFUSION REGION; LITHOGRAPHY PROCESS; MEASUREMENT AND ANALYSIS; MEASUREMENT RESULTS; POLYSILICON GATES; RANDOM VARIATION; RESISTANCE CHANGE; RESISTANCE DISTRIBUTION; SPATIAL CORRELATIONS; SPATIAL VARIATIONS; STATISTICAL ANALYSIS; TECHNOLOGY SCALING; TEST CHIPS; VARIABILITY INFORMATION;

EID: 74049132306     PISSN: 08865930     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CICC.2009.5280812     Document Type: Conference Paper
Times cited : (13)

References (25)
  • 3
    • 50249088115 scopus 로고    scopus 로고
    • S. Demuynck, A. Nackaerts, G. Van den bosch, T. Chiarella, J. Ramos, Z. Tokei, J. Vaes, N. Heylen, G. Beyer, M. Van Hove, T. Mandrekar, and R. Schreutelkamp, Impact of Cu contacts on front-end performance: a projection towards 22nm node, IEEE International Interconnect Technology Conference, pp. 178-180, 2006.
    • S. Demuynck, A. Nackaerts, G. Van den bosch, T. Chiarella, J. Ramos, Z. Tokei, J. Vaes, N. Heylen, G. Beyer, M. Van Hove, T. Mandrekar, and R. Schreutelkamp, "Impact of Cu contacts on front-end performance: a projection towards 22nm node," IEEE International Interconnect Technology Conference, pp. 178-180, 2006.
  • 6
    • 0022855522 scopus 로고
    • Metal-Semiconductor Contacts and Devices
    • 1st ed, Orlando, FL: Academic Press, Inc, ch. 4, pp
    • S. S. Cohen and G. S. Gildenblat, Metal-Semiconductor Contacts and Devices, 1st ed., ser. VLSI Electronics - Microstructure Science. Orlando, FL: Academic Press, Inc., 1986, vol. 13, ch. 4, pp. 87-110.
    • (1986) ser. VLSI Electronics - Microstructure Science , vol.13 , pp. 87-110
    • Cohen, S.S.1    Gildenblat, G.S.2
  • 7
    • 6144254353 scopus 로고
    • A transmission line model for silicided diffusions: Impact on the performance of VLSI circuits
    • Apr
    • D. Scott, W. Hunter, and H. Shichijo, "A transmission line model for silicided diffusions: Impact on the performance of VLSI circuits," Journal of Solid-State Circuits, vol. 17, no. 2, pp. 281-291, Apr. 1982.
    • (1982) Journal of Solid-State Circuits , vol.17 , Issue.2 , pp. 281-291
    • Scott, D.1    Hunter, W.2    Shichijo, H.3
  • 10
    • 0020844494 scopus 로고
    • Direct measurements of interfacial contact resistance, end contact resistance, and interfacial contact layer uniformity
    • Nov
    • S. Proctor, L. Linholm, and J. Mazer, "Direct measurements of interfacial contact resistance, end contact resistance, and interfacial contact layer uniformity," IEEE Transactions on Electron Devices, vol. 30, no. 11, pp. 1535-1542, Nov. 1983.
    • (1983) IEEE Transactions on Electron Devices , vol.30 , Issue.11 , pp. 1535-1542
    • Proctor, S.1    Linholm, L.2    Mazer, J.3
  • 12
    • 0021606654 scopus 로고
    • Lateral current crowding effects on contact resistance measurements in four terminal resistor test patterns
    • Dec
    • M. Finetti, A. Scorzoni, and G. Soncini, "Lateral current crowding effects on contact resistance measurements in four terminal resistor test patterns," IEEE Electron Device Letters, vol. 5, no. 12, pp. 524-526, Dec. 1984.
    • (1984) IEEE Electron Device Letters , vol.5 , Issue.12 , pp. 524-526
    • Finetti, M.1    Scorzoni, A.2    Soncini, G.3
  • 16
    • 0036494619 scopus 로고    scopus 로고
    • Advanced model and analysis of series resistance for CMOS scaling into nanometer regime. I. Theoretical derivation
    • March
    • S.-D. Kim, C.-M. Park, and J. Woo, "Advanced model and analysis of series resistance for CMOS scaling into nanometer regime. I. Theoretical derivation," IEEE Transactions on Electron Devices, vol. 49, no. 3, pp. 457-466, March 2002.
    • (2002) IEEE Transactions on Electron Devices , vol.49 , Issue.3 , pp. 457-466
    • Kim, S.-D.1    Park, C.-M.2    Woo, J.3
  • 17
    • 41949131008 scopus 로고    scopus 로고
    • A new method to determine effective lateral doping abruptness and spreading-resistance components in nanoscale MOSFETs
    • April
    • S. D. Kim, S. Narasimha, and K. Rim, "A new method to determine effective lateral doping abruptness and spreading-resistance components in nanoscale MOSFETs," IEEE Transactions on Electron Devices, vol. 55, no. 4, pp. 1035-1041, April 2008.
    • (2008) IEEE Transactions on Electron Devices , vol.55 , Issue.4 , pp. 1035-1041
    • Kim, S.D.1    Narasimha, S.2    Rim, K.3
  • 21
    • 0036494258 scopus 로고    scopus 로고
    • Advanced model and analysis of series resistance for cmos scaling into nanometer regime. ii. quantitative analysis
    • March
    • S.-D. Kim, C.-M. Park, and J. Woo, "Advanced model and analysis of series resistance for cmos scaling into nanometer regime. ii. quantitative analysis," IEEE Transactions on Electron Devices, vol. 49, no. 3, pp. 467-472, March 2002.
    • (2002) IEEE Transactions on Electron Devices , vol.49 , Issue.3 , pp. 467-472
    • Kim, S.-D.1    Park, C.-M.2    Woo, J.3
  • 22
    • 57849152994 scopus 로고    scopus 로고
    • Characterization, simulation, and modeling of FET source/drain diffusion resistance
    • Sept
    • N. Lu and B. Dewey, "Characterization, simulation, and modeling of FET source/drain diffusion resistance," IEEE Custom Integrated Circuits Conference, pp. 281-284, Sept. 2008.
    • (2008) IEEE Custom Integrated Circuits Conference , pp. 281-284
    • Lu, N.1    Dewey, B.2
  • 23
    • 0038156181 scopus 로고    scopus 로고
    • Modeling of parasitic capacitances in deep submicrometer conventional and high-k dielectric MOS transistors
    • April
    • N. Mohapatra, M. Desai, S. Narendra, and V. Ramgopal Rao, "Modeling of parasitic capacitances in deep submicrometer conventional and high-k dielectric MOS transistors," IEEE Transactions on Electron Devices, vol. 50, no. 4, pp. 959-966, April 2003.
    • (2003) IEEE Transactions on Electron Devices , vol.50 , Issue.4 , pp. 959-966
    • Mohapatra, N.1    Desai, M.2    Narendra, S.3    Ramgopal Rao, V.4
  • 24
    • 36249015412 scopus 로고    scopus 로고
    • Modeling of MOSFET parasitic capacitances, and their impact on circuit performance
    • Nov
    • J. Mueller, R. Thoma, E. Demircan, C. Bernicot, and A. Juge, "Modeling of MOSFET parasitic capacitances, and their impact on circuit performance," Solid State Electronics, vol. 51, pp. 1485-1493, Nov. 2007.
    • (2007) Solid State Electronics , vol.51 , pp. 1485-1493
    • Mueller, J.1    Thoma, R.2    Demircan, E.3    Bernicot, C.4    Juge, A.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.