Measurement of contact resistance distribution using a 4k-contacts array

IEEE Transactions on Semiconductor Manufacturing

Volumn 9, Issue 1, 1996, Pages 9-14

  Hamamoto, Takeshi ^a,b   Ozaki, Tohru ^b   Aoki, Masami ^a,b   Ishibashi, Yutaka ^b  

^a IEEE

^b TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC CONTACTS; INTEGRATED CIRCUIT TESTING;

CONTACT RESISTANCE DISTRIBUTION; CROSS CONTACT ARRAY; GAUSSIAN DISTRIBUTION;

ELECTRIC RESISTANCE MEASUREMENT;

EID: 0030086443     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/66.484277     Document Type: Article

References (6)

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2. T. Mizuno, M. Iwase, H. Niiyama, T. Shibata, K. Fujisaki, T. Nakasugi, A. Toriumi, and Y. Ushiku, "Performance fluctuations of 0.10-μm MOSFET's-limitation of 0.1 μm ULSI's," Tech. Dig. VLSI Symp., 1994, pp. 13-14.
3. S. Inaba, T. Mizuno, M. Iwase, M. Takahashi, H. Niiyama, H. Hazama, M. Yoshimi, and A. Toriumi, "Inverter performance of 0.10-μm CMOS operating at room temperature," IEEE Trans. Electron Devices, vol. 41, pp. 100-105, 1994.
4. M. Buehler and H. Sayah, "Contact resistance measurements using an addressable array," in 1987 Proc. Fourth Int. IEEE VLSI Multilevel Interconnection Conf., 1987, pp. 227-237.
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6. T. Hamamoto, T. Ozaki, M. Aoki, and Y. Ishibashi, "Measurement of contact resistance distribution using a 4k contacts array," in Proc. IEEE 1995 Int. Conf. Microelectronic Test Structures vol. 8, Mar. 1995, pp. 57-61.